TSM2301ACX RFG

Symbol Micros: TTSM2301cx
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
Tranzystor P-MOSFET; 20V; 12V; 190mOhm; 2,8A; 700mW; -55°C ~ 150°C; Odpowiednik: TSM2301CX RF; TSM2301CX-RFG; TSM2301ACX; TSM2301BCX RFG; TSM2301ACX RFG; Zamiennikiem będzie: TSM650P02CX;
Parameters
Open channel resistance: 190mOhm
Max. drain current: 2,8A
Max. power loss: 700mW
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2301ACX RFG RoHS Case style: SOT23t/r Datasheet
In stock:
791 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3366 0,1855 0,1457 0,1351 0,1295
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Packaging:
3000/12000/144000
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2301CX RF RoHS Case style: SOT23t/r Datasheet
In stock:
6000 pcs.
Quantity of pcs. 3+ 20+ 100+ 300+ 1000+
Net price (EUR) 0,3366 0,1855 0,1457 0,1351 0,1295
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Packaging:
3000/21000
Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2301ACX RFG Case style: SOT23  
External warehouse:
93100 pcs.
Quantity of pcs. 100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,1295
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 190mOhm
Max. drain current: 2,8A
Max. power loss: 700mW
Case: SOT23
Manufacturer: TAI-SEM
Max. drain-source voltage: 20V
Transistor type: P-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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