TSM2309CX

Symbol Micros: TTSM2309cx

219278

TTSM2309cx

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 3,1A; 1,56W; -50°C ~ 150°C; TSM2309CX RFG

Parameters

Open channel resistance:	240mOhm
Max. drain current:	3,1A
Max. power loss:	1,56W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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Estimated date:
2026-11-06

Quantity of pcs.: 200

• Parameters

Open channel resistance:	240mOhm
Max. drain current:	3,1A
Max. power loss:	1,56W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	P-MOSFET
Operating temperature (range):	-50°C ~ 150°C
Mounting:	SMD

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