TSM2309CX

Symbol Micros: TTSM2309cx

219278

TTSM2309cx

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 60V; 20V; 240mOhm; 3,1A; 1,56W; -50°C ~ 150°C; TSM2309CX RFG

Parameters

Open channel resistance:	240mOhm
Max. drain current:	3,1A
Max. power loss:	1,56W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2309CX RFG RoHS Case style: SOT23t/r Datasheet

In stock:

94 pcs.

Quantity of pcs.	3+	10+	50+	200+	1000+
Net price (EUR)	0,2682	0,1711	0,1200	0,1042	0,0974

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Packaging:
200 Quantity (multiple: 1)

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Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2309CX RFG Case style: SOT23  

External warehouse:

6800 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,1144

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Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	240mOhm
Max. drain current:	3,1A
Max. power loss:	1,56W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-50°C ~ 150°C
Mounting:	SMD

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