TSM2318CX Taiwan Semi

Symbol Micros: TTSM2318cx

119134

TTSM2318cx

Contractor Symbol:

Case : SOT23-3

Datasheet

Technical drawing Add to favourites

N-MOSFET 40V 3.9A 1.25W 45mΩ

Parameters

Open channel resistance:	62,5mOhm
Max. drain current:	3,9A
Max. power loss:	1,25W
Case:	SOT23-3
Manufacturer:	TAI-SEM
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2318CX RFG RoHS Case style: SOT23-3 t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,2996	0,1593	0,1236	0,1140	0,1092

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2318CX Case style: SOT23-3  

External warehouse:

15400 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,1756

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Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	62,5mOhm
Max. drain current:	3,9A
Max. power loss:	1,25W
Case:	SOT23-3
Manufacturer:	TAI-SEM
Max. drain-source voltage:	40V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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