TSM2NB60CP ROG

Symbol Micros: TTSM2nb60cp

123957

TTSM2nb60cp

Contractor Symbol:

Case : DPAK

Datasheet

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Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R

Parameters

Open channel resistance:	4,4Ohm
Max. drain current:	2A
Max. power loss:	44W
Case:	DPAK
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM2NB60CP ROG RoHS Case style: DPAK t/r Datasheet

In stock:

25 pcs.

Quantity of pcs.	2+	10+	25+	100+	400+
Net price (EUR)	0,6009	0,3776	0,3206	0,2779	0,2612

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Packaging:
25 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	4,4Ohm
Max. drain current:	2A
Max. power loss:	44W
Case:	DPAK
Manufacturer:	TAI-SEM
Max. drain-source voltage:	600V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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