TSM650P02CX

Symbol Micros: TTSM650p02cx

219359

TTSM650p02cx

Contractor Symbol:

Case : SOT23

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MOSFET P-CHANNEL 20V 4.1A SOT23 TSM650P02CX RFG ; Zamiennik za wycofany z produkcji TSM2301ACX RFG; TSM2301CX RFG;

Parameters

Open channel resistance:	130mOhm
Max. power loss:	1,56W
Max. drain current:	4,1A
Case:	SOT23
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	10V

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM650P02CX RFG Case style: SOT23  

External warehouse:

7300 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,0872

Add inquiry (RFQ)

Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM650P02CX RFG Case style: SOT23  

External warehouse:

42000 pcs.

Quantity of pcs.	3000+ (Please wait for the order confirmation)
Net price (EUR)	0,0453

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	130mOhm
Max. power loss:	1,56W
Max. drain current:	4,1A
Case:	SOT23
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	10V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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