TSM650P03CX

Symbol Micros: TTSM650p03cx

219360

TTSM650p03cx

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 30V; 12V; 100mOhm; 4,1A; 1,56W; -55°C ~ 150°C; TSM650P03CX RFG

Parameters

Open channel resistance:	100mOhm
Max. drain current:	4,1A
Max. power loss:	1,56W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM650P03CX RoHS Case style: SOT23t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	5+	20+	100+	200+	1000+
Net price (EUR)	0,2826	0,1551	0,1016	0,0917	0,0810

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	4,1A
Max. power loss:	1,56W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	30V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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