TSM850N06CX

Symbol Micros: TTSM850n06cx

219389

TTSM850n06cx

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 3A; 1,7W; -55°C ~ 150°C; TSM850N06CX RFG

Parameters

Open channel resistance:	100mOhm
Max. drain current:	3A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM850N06CX RPG RoHS Case style: SOT23 Datasheet

In stock:

40 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,2992	0,1641	0,1076	0,0931	0,0857

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	3A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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