TSM850N06CX

Symbol Micros: TTSM850n06cx

219389

TTSM850n06cx

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 3A; 1,7W; -55°C ~ 150°C; TSM850N06CX RFG

Parameters

Open channel resistance:	100mOhm
Max. drain current:	3A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM850N06CX RPG RoHS Case style: SOT23 Datasheet

In stock:

40 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,2975	0,1632	0,1070	0,0926	0,0853

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM850N06CX RFG Case style: SOT23  

External warehouse:

9800 pcs.

Quantity of pcs.	100+ (Please wait for the order confirmation)
Net price (EUR)	0,1116

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Packaging:
100

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	100mOhm
Max. drain current:	3A
Max. power loss:	1,7W
Case:	SOT23
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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