TSM900N06CW

Symbol Micros: TTSM900n06cw

219394

TTSM900n06cw

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG

Parameters

Open channel resistance:	100mOhm
Max. drain current:	11A
Max. power loss:	4,17W
Case:	SOT223
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM900N06CW RPG RoHS Case style: SOT223t/r Datasheet

In stock:

75 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6887	0,4322	0,3586	0,3206	0,2992

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	11A
Max. power loss:	4,17W
Case:	SOT223
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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