TSM900N06CW

Symbol Micros: TTSM900n06cw

219394

TTSM900n06cw

Contractor Symbol:

Case : SOT223

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG

Parameters

Open channel resistance:	100mOhm
Max. drain current:	11A
Max. power loss:	4,17W
Case:	SOT223
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM900N06CW RPG RoHS Case style: SOT223t/r Datasheet

In stock:

65 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6608	0,4147	0,3441	0,3076	0,2871

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Packaging:
100 Quantity (multiple: 1)

- +

Manufacturer:: Taiwan Semiconductor Co., Ltd. Manufacturer part number: TSM900N06CW RPG Case style: SOT223  

External warehouse:

625 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	0,2871

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Packaging:
25

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	100mOhm
Max. drain current:	11A
Max. power loss:	4,17W
Case:	SOT223
Manufacturer:	TAI-SEM
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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