TSM900N06CW
Symbol Micros:
TTSM900n06cw
Case : SOT223
Transistor N-Channel MOSFET; 60V; 20V; 100mOhm; 11A; 4,17W; -55°C ~ 150°C; TSM900N06CW RPG
Parameters
| Open channel resistance: | 100mOhm |
| Max. drain current: | 11A |
| Max. power loss: | 4,17W |
| Case: | SOT223 |
| Manufacturer: | TAI-SEM |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM900N06CW RPG RoHS
Case style: SOT223t/r
Datasheet
In stock:
75 pcs.
| Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,6826 | 0,4284 | 0,3554 | 0,3178 | 0,2966 |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM900N06CW RPG
Case style: SOT223
External warehouse:
2550 pcs.
| Quantity of pcs. | 25+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,2966 |
Manufacturer:: Taiwan Semiconductor Co., Ltd.
Manufacturer part number: TSM900N06CW RPG
Case style: SOT223
External warehouse:
5000 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,2966 |
| Open channel resistance: | 100mOhm |
| Max. drain current: | 11A |
| Max. power loss: | 4,17W |
| Case: | SOT223 |
| Manufacturer: | TAI-SEM |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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