UT6K3TCR DFN2020-8 ROHM

Symbol Micros: TUT6K3TCR

365000

TUT6K3TCR

Contractor Symbol:

Case : DFN08

Datasheet

Technical drawing Add to favourites

Transistor MOSFET Array Dual N-CH 30V 5.5A

Parameters

Open channel resistance:	63mOhm
Max. drain current:	5,5A
Max. power loss:	2W
Case:	DFN2020-8D
Manufacturer:	ROHM Semiconductor
Max. drain-source voltage:	30V
Transistor type:	2xN-MOSFET

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	63mOhm
Max. drain current:	5,5A
Max. power loss:	2W
Case:	DFN2020-8D
Manufacturer:	ROHM Semiconductor
Max. drain-source voltage:	30V
Transistor type:	2xN-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.