UT6K3TCR DFN2020-8 ROHM

Symbol Micros: TUT6K3TCR
Contractor Symbol:
Case : DFN08
Transistor MOSFET Array Dual N-CH 30V 5.5A
Parameters
Open channel resistance: 63mOhm
Max. drain current: 5,5A
Max. power loss: 2W
Case: DFN2020-8D
Manufacturer: ROHM Semiconductor
Max. drain-source voltage: 30V
Transistor type: 2xN-MOSFET
         
 
Item available on request
Open channel resistance: 63mOhm
Max. drain current: 5,5A
Max. power loss: 2W
Case: DFN2020-8D
Manufacturer: ROHM Semiconductor
Max. drain-source voltage: 30V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 12V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD