VNB35N07

Symbol Micros: TVNB35n07

66642

TVNB35n07

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 35A 70V 28mΩ 125W VNB35N07-E(50pcs/tube), VNB35N0713TR(1000pcs/Tape&Reel), VNB35N07TR-E(1000pcs/TR

Parameters

Open channel resistance:	35mOhm
Max. drain current:	35A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	70V
Transistor type:	OMNI-FET

All parameters

Manufacturer:: ST Manufacturer part number: VNB35N07-E RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

5 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	5,6752	4,8043	4,2794	3,9404	3,8086

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ST Manufacturer part number: VNB35N07TR-E Case style: TO263 (D2PAK)  

External warehouse:

78000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,8086

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Packaging:
1000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	35mOhm
Max. drain current:	35A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	70V
Transistor type:	OMNI-FET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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