VND10N06
Symbol Micros:
TVND10n06
Case : TO252
N-MOSFET 10A 60V 35W 0.3Ω
Parameters
| Open channel resistance: | 300mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 35W |
| Case: | TO252 |
| Manufacturer: | STMicroelectronics |
| Max. drain-source voltage: | 60V |
| Transistor type: | OMNI-FET |
Manufacturer:: ST
Manufacturer part number: VND10N06 RoHS
Case style: TO252t/r
Datasheet
In stock:
40 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 1,3744 | 1,0502 | 0,8693 | 0,7612 | 0,7236 |
Manufacturer:: ST
Manufacturer part number: VND10N06TR-E
Case style: TO252
External warehouse:
180000 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,7458 |
Manufacturer:: ST
Manufacturer part number: VND10N06TR-E
Case style: TO252
External warehouse:
15000 pcs.
| Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 0,7420 |
| Open channel resistance: | 300mOhm |
| Max. drain current: | 10A |
| Max. power loss: | 35W |
| Case: | TO252 |
| Manufacturer: | STMicroelectronics |
| Max. drain-source voltage: | 60V |
| Transistor type: | OMNI-FET |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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