VND10N06

Symbol Micros: TVND10n06

44352

TVND10n06

Contractor Symbol:

Case : TO252

Datasheet

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N-MOSFET 10A 60V 35W 0.3Ω

Parameters

Open channel resistance:	300mOhm
Max. drain current:	10A
Max. power loss:	35W
Case:	TO252
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Transistor type:	OMNI-FET

All parameters

Manufacturer:: ST Manufacturer part number: VND10N06 RoHS Case style: TO252t/r Datasheet

In stock:

40 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2157	0,9266	0,7672	0,6739	0,6397

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: ST Manufacturer part number: VND10N06TR-E Case style: TO252  

External warehouse:

10000 pcs.

Quantity of pcs.	2500+ (Please wait for the order confirmation)
Net price (EUR)	0,7448

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Packaging:
2500

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	300mOhm
Max. drain current:	10A
Max. power loss:	35W
Case:	TO252
Manufacturer:	STMicroelectronics
Max. drain-source voltage:	60V
Transistor type:	OMNI-FET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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