WPM2015

Symbol Micros: TWPM2015 c

400945

TWPM2015  c

Contractor Symbol:

Case : SOT23

Datasheet

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Transistor P-Channel MOSFET; 20V; +/-8V; 2,4A; 110mOhm; 1,1W; -55°C~150°C; Substitute: HXY MOSFET WPM2015; WILLSEMI WPM2015-3/TR; VBSEMI WPM2015-3/TR; WPM2015-HXY;

Parameters

Open channel resistance:	110mOhm
Max. drain current:	2,4A
Max. power loss:	1,1W
Case:	SOT23
Manufacturer:	KUU
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V

All parameters

Manufacturer:: HXY MOSFET Manufacturer part number: WPM2015-HXY RoHS Case style: SOT23t/r Datasheet

In stock:

300 pcs.

Quantity of pcs.	5+	20+	100+	300+	1000+
Net price (EUR)	0,2036	0,1021	0,0607	0,0503	0,0453

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Packaging:
300 Quantity (multiple: 1)

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Manufacturer:: kuu semiconductor Manufacturer part number: WPM2015-3/TR RoHS Case style: SOT23t/r Datasheet

In stock:

300 pcs.

Quantity of pcs.	5+	20+	100+	300+	1500+
Net price (EUR)	0,1930	0,0910	0,0508	0,0406	0,0351

Add to comparison tool Add inquiry (RFQ)

Packaging:
300 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	110mOhm
Max. drain current:	2,4A
Max. power loss:	1,1W
Case:	SOT23
Manufacturer:	KUU
Max. drain-source voltage:	20V
Max. gate-source Voltage:	8V
Transistor type:	P-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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