YGE5N65TMA1 LUXIN-SEMI

Symbol Micros: TYGE5n65tma1

533698

TYGE5n65tma1

Contractor Symbol:

Case : TO252 (DPACK)

Datasheet

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Transistor IGBT ; 650V; 20V; 10A; 15A; 60W; 4,4V~6,0V; 12nC; -40°C~175°C; Similar to: IKD06N60RFATMA1;

Parameters

Gate charge:	12nC
Max. dissipated power:	60W
Max collector current (impulse):	15A
Max. collector current:	10A
Forvard volatge [Vgeth]:	4,4V ~ 6,0V
Case:	TO252 (DPAK)
Manufacturer:	LUXIN-SEMI

All parameters

Manufacturer:: LUXIN-SEMI Manufacturer part number: YGE5N65TMA1 RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	15+	100+	200+	1000+
Net price (EUR)	0,7026	0,4116	0,3312	0,3194	0,3052

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Packaging:
100/200 Quantity (multiple: 1)

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• Parameters

Gate charge:	12nC
Max. dissipated power:	60W
Max collector current (impulse):	15A
Max. collector current:	10A
Forvard volatge [Vgeth]:	4,4V ~ 6,0V
Case:	TO252 (DPAK)
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	SMD

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