YGP15N65TMA1 LUXIN-SEMI

Symbol Micros: TYGP15n65tma1

530322

TYGP15n65tma1

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 650V; 25V; 30A; 45A; 30,6W; 5,5V~6V; 45nC; -40°C~150°C;

Parameters

Gate charge:	45nC
Max. dissipated power:	125W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	5,5V ~ 6V
Case:	TO220
Manufacturer:	LUXIN-SEMI

All parameters

Manufacturer:: LUXIN-SEMI Manufacturer part number: YGP15N65TMA1 RoHS Case style: TO220 Datasheet

In stock:

100 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,9385	0,6879	0,5532	0,4728	0,4468

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Gate charge:	45nC
Max. dissipated power:	125W
Max collector current (impulse):	45A
Max. collector current:	30A
Forvard volatge [Vgeth]:	5,5V ~ 6V
Case:	TO220
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	25V
Mounting:	THT

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