YGP20N65T2 LUXIN-SEMI

Symbol Micros: TYGP20n65t2

530324

TYGP20n65t2

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 650V; 25V; 40A; 60A; 125W; 4,6V~6,2V; 45nC; -40°C~150°C; Similar to: IKP15N60TXKSA1; IRGB4620DPBF;

Parameters

Gate charge:	45nC
Max. dissipated power:	125W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,6V ~ 6,2V
Case:	TO220
Manufacturer:	LUXIN-SEMI

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Estimated date:
2025-11-14

Quantity of pcs.: 200

• Parameters

Gate charge:	45nC
Max. dissipated power:	125W
Max collector current (impulse):	60A
Max. collector current:	40A
Forvard volatge [Vgeth]:	4,6V ~ 6,2V
Case:	TO220
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	25V
Mounting:	THT

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