YGW25N120TMB1 LUXIN-SEMI

Symbol Micros: TYGW25n120tmb1

533701

TYGW25n120tmb1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 50A; 75A; 273W; 4,4V~6,0V; 23nC; -40°C~175°C; Similar to: IKW25N120H3FKSA1; IKW25N120T2FKSA1;

Parameters

Gate charge:	23nC
Max. dissipated power:	273W
Max collector current (impulse):	75A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,4V ~ 6,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI

All parameters

Manufacturer:: LUXIN-SEMI Manufacturer part number: YGW25N120TMB1 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	2,0061	1,4880	1,2704	1,1970	1,1805

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	23nC
Max. dissipated power:	273W
Max collector current (impulse):	75A
Max. collector current:	50A
Forvard volatge [Vgeth]:	4,4V ~ 6,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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