YGW40N120T3 LUXIN-SEMI

Symbol Micros: TYGW40n120t3

530327

TYGW40n120t3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 80A; 160A; 416W; 5,2V~6,5V; 255nC; -40°C~150°C; Similar to: IKW40N120T2FKSA1; RGS80TSX2DHRC11;

Parameters

Gate charge:	255nC
Max. dissipated power:	416W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,2V ~ 6,5V
Case:	TO247
Manufacturer:	LUXIN-SEMI

All parameters

         

 

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• Parameters

Gate charge:	255nC
Max. dissipated power:	416W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	5,2V ~ 6,5V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	1200V
Gate-emitter voltage:	20V
Mounting:	THT

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