YGW40N65F1 LUXIN-SEMI

Symbol Micros: TYGW40n65f1

530328

TYGW40n65f1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 80A; 120A; 250W; 4V~6V; 90nC; -40°C~150°C; Similar to: IKW40N60H3FKSA1; IRGP4640DPBF;

Parameters

Gate charge:	90nC
Max. dissipated power:	250W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI

All parameters

         

 

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• Parameters

Gate charge:	90nC
Max. dissipated power:	250W
Max collector current (impulse):	120A
Max. collector current:	80A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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