YGW40N65FMA1 LUXIN-SEMI

Symbol Micros: TYGW40n65fma1

533702

TYGW40n65fma1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 80A; 160A; 197W; 3V~5V; 75nC; -40°C~175°C; Similar to: IKW40N60H3FKSA1; IRGP4640DPBF;

Parameters

Gate charge:	75nC
Max. dissipated power:	197W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,0V ~ 5,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI

All parameters

Manufacturer:: LUXIN-SEMI Manufacturer part number: YGW40N65FMA1 RoHS Case style: TO247 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,7246	1,3674	1,1639	1,0693	1,0149

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Packaging:
10 Quantity (multiple: 1)

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Manufacturer:: LUXIN-SEMI Manufacturer part number: YGW40N65FMA1 RoHS Case style: TO247 Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	5+	25+	100+	300+
Net price (EUR)	1,7246	1,2798	1,1024	1,0385	1,0149

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Packaging:
25 Quantity (multiple: 1)

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• Parameters

Gate charge:	75nC
Max. dissipated power:	197W
Max collector current (impulse):	160A
Max. collector current:	80A
Forvard volatge [Vgeth]:	3,0V ~ 5,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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