YGW50N65T1 LUXIN-SEMI
Symbol Micros:
TYGW50n65t1
Case : TO247
Transistor IGBT ; 650V; 20V; 100A; 150A; 312W; 4V~6V; 180nC; -40°C~175°C; Similar to: IKW50N60TFKSA1; RGS00TS65EHRC11;
Parameters
| Gate charge: | 180nC |
| Max. dissipated power: | 312W |
| Max collector current (impulse): | 150A |
| Max. collector current: | 100A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | LUXIN-SEMI |
| Gate charge: | 180nC |
| Max. dissipated power: | 312W |
| Max collector current (impulse): | 150A |
| Max. collector current: | 100A |
| Forvard volatge [Vgeth]: | 4,0V ~ 6,0V |
| Case: | TO247 |
| Manufacturer: | LUXIN-SEMI |
| Operating temperature (range): | -40°C ~ 175°C |
| Collector-emitter voltage: | 650V |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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