YGW50N65T1 LUXIN-SEMI

Symbol Micros: TYGW50n65t1

530330

TYGW50n65t1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 100A; 150A; 312W; 4V~6V; 180nC; -40°C~175°C; Similar to: IKW50N60TFKSA1; RGS00TS65EHRC11;

Parameters

Gate charge:	180nC
Max. dissipated power:	312W
Max collector current (impulse):	150A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI

All parameters

         

 

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• Parameters

Gate charge:	180nC
Max. dissipated power:	312W
Max collector current (impulse):	150A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,0V ~ 6,0V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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