YGW50N65T1 LUXIN-SEMI

Symbol Micros: TYGW50n65t1
Contractor Symbol:
Case : TO247
Transistor IGBT ; 650V; 20V; 100A; 150A; 312W; 4V~6V; 180nC; -40°C~175°C; Similar to: IKW50N60TFKSA1; RGS00TS65EHRC11;
Parameters
Gate charge: 180nC
Max. dissipated power: 312W
Max collector current (impulse): 150A
Max. collector current: 100A
Forvard volatge [Vgeth]: 4,0V ~ 6,0V
Case: TO247
Manufacturer: LUXIN-SEMI
         
 
Item available on request
Gate charge: 180nC
Max. dissipated power: 312W
Max collector current (impulse): 150A
Max. collector current: 100A
Forvard volatge [Vgeth]: 4,0V ~ 6,0V
Case: TO247
Manufacturer: LUXIN-SEMI
Operating temperature (range): -40°C ~ 175°C
Collector-emitter voltage: 650V
Gate-emitter voltage: 20V
Mounting: THT