YGW60N65FMA1 LUXIN-SEMI

Symbol Micros: TYGW60n65fma1

530331

TYGW60n65fma1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 100A; 180A; 273W; 4,7V~6,3V; 145nC; -40°C~175°C; Similar to: IKW50N65EH5XKSA1; IKZ50N65EH5XKSA1;

Parameters

Gate charge:	145nC
Max. dissipated power:	273W
Max collector current (impulse):	180A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,7V ~ 6,3V
Case:	TO247
Manufacturer:	LUXIN-SEMI

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Estimated date:
2025-11-14

Quantity of pcs.: 60

• Parameters

Gate charge:	145nC
Max. dissipated power:	273W
Max collector current (impulse):	180A
Max. collector current:	100A
Forvard volatge [Vgeth]:	4,7V ~ 6,3V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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