YGW60N65T1 LUXIN-SEMI

Symbol Micros: TYGW60n65t1

530332

TYGW60n65t1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 120A; 180A; 416W; 4,3V~6,4V; 158nC; -40°C~150°C; Similar to: IKW50N65EH5XKSA1; IKW60N60H3FKSA1;

Parameters

Gate charge:	158nC
Max. dissipated power:	416W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	4,3V ~ 6,4V
Case:	TO247
Manufacturer:	LUXIN-SEMI

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Estimated date:
2025-11-14

Quantity of pcs.: 60

• Parameters

Gate charge:	158nC
Max. dissipated power:	416W
Max collector current (impulse):	180A
Max. collector current:	120A
Forvard volatge [Vgeth]:	4,3V ~ 6,4V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 150°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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