YGW80N65FMA1 LUXIN-SEMI

Symbol Micros: TYGW80n65fma1

533703

TYGW80n65fma1

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 650V; 20V; 160A; 240A; 312W; 4,5V~6,1V; 220nC; -40°C~175°C; Similar to: IKW75N65EH5XKSA1;

Parameters

Gate charge:	220nC
Max. dissipated power:	312W
Max collector current (impulse):	240A
Max. collector current:	160A
Forvard volatge [Vgeth]:	4,5V ~ 6,1V
Case:	TO247
Manufacturer:	LUXIN-SEMI

All parameters

Manufacturer:: LUXIN-SEMI Manufacturer part number: YGW80N65FMA1 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	2,9784	2,5597	2,3136	2,1930	2,1268

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	220nC
Max. dissipated power:	312W
Max collector current (impulse):	240A
Max. collector current:	160A
Forvard volatge [Vgeth]:	4,5V ~ 6,1V
Case:	TO247
Manufacturer:	LUXIN-SEMI
Operating temperature (range):	-40°C ~ 175°C
Collector-emitter voltage:	650V
Gate-emitter voltage:	20V
Mounting:	THT

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