ZXMS6004DN8-13

Symbol Micros: TZXMS6004DN8-13 Diodes
Contractor Symbol:
Case : SOIC08
Self Protected Enhancement Mode Intellifet MOSFET
Parameters
Open channel resistance: 600mOhm
Max. drain current: 1,3A
Max. power loss: 1,56W
Case: SOIC08
Manufacturer: DIODES
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
         
 
Item available on request
         
 
Item in delivery
Estimated date:
2027-04-30
Quantity of pcs.: 2500
Open channel resistance: 600mOhm
Max. drain current: 1,3A
Max. power loss: 1,56W
Case: SOIC08
Manufacturer: DIODES
Max. drain-source voltage: 60V
Transistor type: 2xN-MOSFET
Operating temperature (range): -40°C ~ 150°C
Mounting: SMD