MJD45H11J DPAK(SOT428C) NEXPERIA

Symbol Micros: TMJD45H11J
Contractor Symbol:
Case : DPAK
Bipolar (BJT) Transistor PNP 80V 8A 80MHz 1.75W Surface Mount DPAK
Parameters
Power dissipation: 1,75W
Current gain factor: 60
Cutoff frequency: 80MHz
Manufacturer: Nexperia
Case: DPAK
Max. collector current: 8A
Max collector-emmiter voltage: 80V
Manufacturer:: NXP Manufacturer part number: MJD45H11J RoHS Case style: DPAK t/r Datasheet
In stock:
47 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6644 0,4167 0,3472 0,3079 0,2894
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Packaging:
100
Power dissipation: 1,75W
Current gain factor: 60
Cutoff frequency: 80MHz
Manufacturer: Nexperia
Case: DPAK
Max. collector current: 8A
Max collector-emmiter voltage: 80V
Operating temperature (range): -55°C ~ 150°C
Transistor type: PNP