MMBT5551LT1G
Symbol Micros:
TMMBT5551 ON
Case : SOT23-3
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 MMBT5551LT3G MMBT5551LT1
Parameters
| Power dissipation: | 300mW |
| Current gain factor: | 250 |
| Manufacturer: | ON SEMICONDUCTOR |
| Case: | SOT23-3 |
| Max. collector current: | 600mA |
| Max collector-emmiter voltage: | 160V |
| Operating temperature (range): | -55°C ~ 150°C |
| Power dissipation: | 300mW |
| Current gain factor: | 250 |
| Manufacturer: | ON SEMICONDUCTOR |
| Case: | SOT23-3 |
| Max. collector current: | 600mA |
| Max collector-emmiter voltage: | 160V |
| Operating temperature (range): | -55°C ~ 150°C |
| Transistor type: | NPN |
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