HGT1S10N120BNS

Symbol Micros: THGT1S10n120bns

Case : TO263 (D2PAK)

35A; 1200V; 298W; IGBT

Parameters

Gate charge:	150nC
Max. dissipated power:	298W
Max. collector current:	35A
Max collector current (impulse):	80A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR

Gate charge:	150nC
Max. dissipated power:	298W
Max. collector current:	35A
Max collector current (impulse):	80A
Forvard volatge [Vgeth]:	6,0V ~ 6,8V
Case:	TO263 (D2PAK)
Manufacturer:	ON SEMICONDUCTOR
Collector-emitter voltage:	1200V
Operating temperature (range):	-55°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT