HGTP12N60A4D
Symbol Micros:
THGTP12n60a4d
Case : TO220
54A; 600V; 167W; IGBT w/ Diode
Parameters
| Gate charge: | 120nC |
| Max. dissipated power: | 167W |
| Max. collector current: | 54A |
| Max collector current (impulse): | 96A |
| Forvard volatge [Vgeth]: | 5,6V |
| Case: | TO220 |
| Manufacturer: | ON SEMICONDUCTOR |
| Gate charge: | 120nC |
| Max. dissipated power: | 167W |
| Max. collector current: | 54A |
| Max collector current (impulse): | 96A |
| Forvard volatge [Vgeth]: | 5,6V |
| Case: | TO220 |
| Manufacturer: | ON SEMICONDUCTOR |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -55°C ~ 150°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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