BSS314PEH6327 Infineon

Symbol Micros: TBSS314pe
Contractor Symbol:
Case : SOT23
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P-MOSFET 30V 1.5A 140mΩ 500mW BSS314PEH6327XTSA1
Parameters
Open channel resistance: 230mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: BSS314PEH6327XTSA1 RoHS Case style: SOT23t/r Datasheet
In stock:
2435 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,9005 0,5695 0,4491 0,4097 0,3912
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Packaging:
3000
Open channel resistance: 230mOhm
Max. drain current: 1,5A
Max. power loss: 500mW
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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