Choose speed: JSMSEMI pulse diodes now available

2026-02-13

Fast and ultra-fast switching diodes for signal and protection applications

JSMSEMI diodes from the BAS and BAV series are high-quality switching diodes designed for circuits requiring very fast response times, high reliability, and stable electrical parameters. These BAS/BAV diodes are ideal for signal path applications and rapid voltage switching in modern digital and analog electronics.

The series includes models with various current ratings (up to 0.25 A) and reverse voltage ratings (from 75 V to 250 V), allowing flexible component selection depending on application requirements. Thanks to very short reverse recovery times (from a few to several dozen nanoseconds), these diodes ensure minimal switching losses and high signal integrity.

Technical features:

  • Very fast and ultra-fast switching times (typically 4–50 ns, depending on the model)
  • maximum forward current up to 250 mA
  • Reverse voltage from 75 V to 250 V
  • Low junction capacitance – reduced signal distortion
  • Stable parameters over a wide temperature range
  • Low power dissipation (up to approx. 0.5 W depending on version)
  • SMD versions optimized for surface-mount assembly
  • Tape/reel packaging – ready for mass production

Applications:

  • Digital electronics: data lines and buses, logic circuits, fast signal switches
  • Circuit protection: input overvoltage protection, voltage spike suppression, microcontroller and IC protection
  • Telecommunications and multimedia: audio and video signal paths, communication devices, low-power RF systems
  • Power supply and automation: switching converters, drivers, I/O modules, industrial electronics
  • Consumer electronics: home appliances, portable devices, control systems

If you want to check current stock levels and prices, click on the product symbol.

SYMBOL DESCRIPTION

BAS16

BAS16 SOT23 JSMSEMI dioda impulsowa

0,15A; 75V; ultrafast <6ns; packaging: tape&reel

BAS16J

BAS16J SOD323 JSMSEMI  dioda impulsowa

0,25A; 100V; fast <4ns; packaging: tape/reel

BAS21

BAS21 SOT23 JSMSEMI

0,2A; 250V; SMD; 50ns; packaging: tape&reel

BAS216WT

BAS216WT SOD523 JSMSEMI

100V; 0,15A; 4ns; 150mW packaging: tape&reel

BAV102

BAV102 SOD80 JSMSEMI dioda impulsowa

0,25A; 200V; fast <50ns; packaging: tape&reel

BAV199

BAV199 SOT23 JSMICRO dioda impulsowa podwójna

0,2A; 80V; <3us; packaging: tape&reel

BAV21W

BAV21W SOD123 JSMSEMI

0,2A; 250V; SMD; 0,5W; packaging: tape&reel

BAV21WS

BAV21WS SOD323 JSMSEMI dioda przełączająca

0,2A; 250V; fast <50ns packaging: tape&reel

BAV70W

BAV70W SOT323 JSMSEMI

0,175A; 100V; SMD; 4ns; packaging: tape&reel
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