AOD417 HXY MOSFET

Symbol Micros: TAOD417 HXY
Contractor Symbol:
Case : TO252 (DPACK)
Transistor P-Channel MOSFET; 30V; 20V; 44mOhm; 40A; 34,7W; -55°C ~ 150°C; Equivalent: AOD417 Alpha&Omega Semiconductor AOS;
Parameters
Open channel resistance: 44mOhm
Max. drain current: 40A
Max. power loss: 34,7W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: AOD417 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,3202 0,2052 0,1445 0,1227 0,1166
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Packaging:
300
Open channel resistance: 44mOhm
Max. drain current: 40A
Max. power loss: 34,7W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 30V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD