BSS123 NXP

Symbol Micros: TBSS123 NXP
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
N-MOSFET 100V 150mA 6Ω 250mW BSS123,215
Parameters
Open channel resistance: 6Ohm
Max. drain current: 150mA
Max. power loss: 250mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Manufacturer:: NXP Manufacturer part number: BSS123,215 RoHS Case style: SOT23t/r  
In stock:
12075 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1777 0,0845 0,0476 0,0360 0,0323
Add to comparison tool
Packaging:
3000
Open channel resistance: 6Ohm
Max. drain current: 150mA
Max. power loss: 250mW
Case: SOT23
Manufacturer: NXP
Max. drain-source voltage: 100V
Max. drain-gate voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols