BSS138-7-F Diodes

Symbol Micros: TBSS138 DIO
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Case : SOT23-3
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N-MOSFET 50V 200mA 3.5mΩ 300mW
Parameters
Open channel resistance: 3,5Ohm
Max. drain current: 200mA
Max. power loss: 300mW
Case: SOT23-3
Manufacturer: DIODES
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
         
 
Item available on request
Open channel resistance: 3,5Ohm
Max. drain current: 200mA
Max. power loss: 300mW
Case: SOT23-3
Manufacturer: DIODES
Max. drain-source voltage: 50V
Max. drain-gate voltage: 50V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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