BSS169H6327XTSA1

Symbol Micros: TBSS169
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Case : SOT23
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Transistor N-Channel MOSFET; 100V; 20V; 12Ohm; 170mA; 360mW; -55°C ~ 150°C; Replacement: BSS169H6327; BSS169H6327XTSA1; BSS169I; SP005558635; BSS169; BSS169H6906XTSA1;
Parameters
Open channel resistance: 12Ohm
Max. power loss: 360mW
Max. drain current: 170mA
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 12Ohm
Max. power loss: 360mW
Max. drain current: 170mA
Case: SOT23
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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