FDD8896 JGSEMI

Symbol Micros: TFDD8896 JGS
Contractor Symbol:
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 30V; 20V; 8,5mOhm; 80A; 54W; -55°C ~ 125°C; Equivalent: FDD8896 Onsemi;
Parameters
Open channel resistance: 8,5mOhm
Max. drain current: 80A
Max. power loss: 54W
Case: TO252 (DPACK)
Manufacturer: JGSEMI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: JGSEMI Manufacturer part number: FDD8896 RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
500 pcs.
Quantity of pcs. 3+ 20+ 100+ 500+ 2000+
Net price (EUR) 0,3225 0,1725 0,1342 0,1215 0,1175
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Packaging:
500
Open channel resistance: 8,5mOhm
Max. drain current: 80A
Max. power loss: 54W
Case: TO252 (DPACK)
Manufacturer: JGSEMI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 125°C
Mounting: SMD