FDD8896 TO-252 TECH PUBLIC
Symbol Micros:
TFDD8896 TEC
Case : TO252
Transistor N-Channel MOSFET; 30V; 20V; 7,5mOhm; 90A; 181W; -55°C ~ 175°C; Substitute: FDD8896-VB; YFW100N03AD;
Parameters
Open channel resistance: | 7,5mOhm |
Max. drain current: | 90A |
Max. power loss: | 181W |
Case: | TO252 |
Manufacturer: | TECH PUBLIC |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Open channel resistance: | 7,5mOhm |
Max. drain current: | 90A |
Max. power loss: | 181W |
Case: | TO252 |
Manufacturer: | TECH PUBLIC |
Max. drain-source voltage: | 30V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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