FDV303N

Symbol Micros: TFDV303n
Contractor Symbol:
Case : SOT23
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N-MOSFET 0.68A 25V 0.35W 0.45Ω
Parameters
Open channel resistance: 800mOhm
Max. drain current: 680mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Max. gate-source Voltage: 8V
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N RoHS Case style: SOT23t/r  
In stock:
8366 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1960 0,0994 0,0602 0,0477 0,0436
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Packaging:
3000
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N Case style: SOT23  
External warehouse:
9800 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 0,0653
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 800mOhm
Max. drain current: 680mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Max. gate-source Voltage: 8V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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