FDV303N

Symbol Micros: TFDV303n
Contractor Symbol:
Case : SOT23
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N-MOSFET 0.68A 25V 0.35W 0.45Ω
Parameters
Open channel resistance: 800mOhm
Max. power loss: 350mW
Max. drain current: 680mA
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N RoHS Case style: SOT23t/r  
In stock:
6241 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1540 0,0733 0,0411 0,0313 0,0280
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Packaging:
3000
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N Case style: SOT23  
External warehouse:
5202000 pcs.
Quantity of pcs. 15000+ (Please wait for the order confirmation)
Net price (EUR) 0,0280
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Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N Case style: SOT23  
External warehouse:
3700 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 0,0371
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Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 800mOhm
Max. power loss: 350mW
Max. drain current: 680mA
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Transistor type: N-MOSFET
Max. gate-source Voltage: 8V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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