FDV303N

Symbol Micros: TFDV303n
Contractor Symbol:
Case : SOT23
Technical drawing Add to favourites
N-MOSFET 0.68A 25V 0.35W 0.45Ω
Parameters
Open channel resistance: 800mOhm
Max. drain current: 680mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Max. gate-source Voltage: 8V
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N RoHS Case style: SOT23t/r  
In stock:
8886 pcs.
Quantity of pcs. 5+ 20+ 100+ 500+ 3000+
Net price (EUR) 0,1963 0,0995 0,0603 0,0478 0,0436
Add to comparison tool
Packaging:
3000
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N Case style: SOT23  
External warehouse:
2937000 pcs.
Quantity of pcs. 15000+ (Please wait for the order confirmation)
Net price (EUR) 0,0436
Add to comparison tool
Packaging:
3000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ON-Semiconductor Manufacturer part number: FDV303N Case style: SOT23  
External warehouse:
10300 pcs.
Quantity of pcs. 100+ (Please wait for the order confirmation)
Net price (EUR) 0,0656
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 800mOhm
Max. drain current: 680mA
Max. power loss: 350mW
Case: SOT23
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 25V
Max. gate-source Voltage: 8V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols