IRF640N

Symbol Micros: TIRF640n
Contractor Symbol:
Case : TO220
N-MOSFET 18A 200V 150W 0.15Ω
Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF640NPBF RoHS Case style: TO220  
In stock:
353 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7568 0,4788 0,3784 0,3457 0,3293
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Packaging:
50/1000
         
 
Item in delivery
Estimated date:
2025-11-20
Quantity of pcs.: 500
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT