IRF640NPBF HXY MOSFET

Symbol Micros: TIRF640n HXY
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Case : TO220
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Transistor N-Channel MOSFET; 200V; 20V; 145mOhm; 18A; 125W; -55°C ~ 150°C; Equivalent: IRF640PBF; IRF640NPBF; SP001570078;
Parameters
Open channel resistance: 145mOhm
Max. drain current: 18A
Max. power loss: 125W
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: IRF640NPBF RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,7446 0,4677 0,3653 0,3444 0,3234
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Packaging:
50/100
Open channel resistance: 145mOhm
Max. drain current: 18A
Max. power loss: 125W
Case: TO220
Manufacturer: HXY MOSFET
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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