IRLR120N smd

Symbol Micros: TIRLR120n
Contractor Symbol:
Case : TO252 (DPACK)
Technical drawing Add to favourites
N-MOSFET 10A 100V 48W 0.185Ω
Parameters
Open channel resistance: 265mOhm
Max. drain current: 10A
Max. power loss: 48W
Case: TO252 (DPACK)
Manufacturer: International Rectifier
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRLR120NTR RoHS Case style: TO252 (DPACK) t/r  
In stock:
0 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,9137 0,5778 0,4557 0,4157 0,3969
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Packaging:
2000
Manufacturer:: Infineon Manufacturer part number: IRLR120NTRL RoHS Case style: TO252 (DPACK) t/r  
In stock:
330 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,9137 0,5778 0,4557 0,4157 0,3969
Add to comparison tool
Packaging:
3000
Manufacturer:: Infineon Manufacturer part number: IRLR120NTR RoHS Case style: TO252 (DPACK)  
In stock:
1496 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,9137 0,5778 0,4557 0,4157 0,3969
Add to comparison tool
Packaging:
2000
Open channel resistance: 265mOhm
Max. drain current: 10A
Max. power loss: 48W
Case: TO252 (DPACK)
Manufacturer: International Rectifier
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 16V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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