IRLR3636 IRLR3636PBF-GURT
Symbol Micros:
TIRLR3636
Case : TO252 (DPAK)
N-MOSFET 50A 60V 143W 0.068Ω IRLR3636PBF IRLR3636TRPBF (2000/T&R) IRLR3636TRLPBF (3K/RL) IRLR3636PBF-GURT; PGD06N026M;
Parameters
| Open channel resistance: | 8,3mOhm |
| Max. drain current: | 99A |
| Max. power loss: | 143W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon (IRF) |
| Max. drain-source voltage: | 60V |
| Max. gate-source Voltage: | 16V |
Manufacturer:: Infineon
Manufacturer part number: IRLR3636TR RoHS
Case style: TO252 (DPACK) t/r
In stock:
1400 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,8789 | 0,5836 | 0,4836 | 0,4371 | 0,4185 |
Manufacturer:: Infineon
Manufacturer part number: IRLR3636TRPBF
Case style: TO252 (DPAK)
External warehouse:
3500 pcs.
| Quantity of pcs. | 50+ (Please wait for the order confirmation) |
|---|---|
| Net price (EUR) | 0,6707 |
| Open channel resistance: | 8,3mOhm |
| Max. drain current: | 99A |
| Max. power loss: | 143W |
| Case: | TO252 (DPACK) |
| Manufacturer: | Infineon (IRF) |
| Max. drain-source voltage: | 60V |
| Max. gate-source Voltage: | 16V |
| Transistor type: | N-MOSFET |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
Equivalents
Manufacturer::
HXY MOSFET
Manufacturer part number:
IRLR3636PBF RoHS
Case style:
TO252 (DPACK) t/r
In stock
98 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 500+ |
| Net price (EUR) | 0,9719 | 0,6464 | 0,5348 | 0,4813 | 0,4627 |
Packaging: 100
Quantity (multiple 1)
Add Symbol
Cancel
All Contractor Symbols