IRLR3636PBF HXY MOSFET

Symbol Micros: TIRLR3636 HXY
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Case : TO252 (DPACK)
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Transistor N-Channel MOSFET; 60V; 20V; 17mOhm; 80A; 100W; -55°C ~ 150°C; Equivalent: IRLR3636PBF; IRLR3636TRLPBF; IRLR3636TRPBF; SP001553190; SP001569134; SP001574002;
Parameters
Open channel resistance: 17mOhm
Max. drain current: 80A
Max. power loss: 100W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: HXY MOSFET Manufacturer part number: IRLR3636PBF RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 0,9839 0,6544 0,5414 0,4873 0,4684
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Packaging:
100
Open channel resistance: 17mOhm
Max. drain current: 80A
Max. power loss: 100W
Case: TO252 (DPACK)
Manufacturer: HXY MOSFET
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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