NTD5867N

Symbol Micros: TNTD5867n c

403084

TNTD5867n c

Contractor Symbol:

Case : TO252

Datasheet

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Transistor N-MOSFET; 60V; 20V; 33mOhm; 20A; 50W; -55°C~150°C; Substitute: NTD5867NLT4G; NTD5867NL-VB; NTD5867NLT4G-VB; NTD5867NLT4G;

Equivalents

Parameters

Open channel resistance:	33mOhm
Max. drain current:	20A
Max. power loss:	50W
Case:	TO252
Manufacturer:	TECH PUBLIC
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: TECH PUBLIC Manufacturer part number: NTD5867NLT4G RoHS Case style: TO252 (DPACK) t/r Datasheet

In stock:

150 pcs.

Quantity of pcs.	2+	10+	40+	150+	300+
Net price (EUR)	0,6765	0,4228	0,3382	0,3030	0,2936

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Packaging:
150 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	33mOhm
Max. drain current:	20A
Max. power loss:	50W
Case:	TO252
Manufacturer:	TECH PUBLIC
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

Equivalents

NTD5867NLT4G

Symbol Micros: NTD5867NLT4G Info Add to favourites Equivalents

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