NTD5867NLT4G

Symbol Micros: TNTD5867nl
Contractor Symbol:
Case : TO252 (DPACK)
Technical drawing Add to favourites
Tranzystor N-MOSFET; 60V; 20V; 50mOhm; 20A; 36W; -55°C ~ 150°C; OBSOLETE;
Parameters
Open channel resistance: 50mOhm
Max. drain current: 20A
Max. power loss: 36W
Case: TO252 (DPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 50mOhm
Max. drain current: 20A
Max. power loss: 36W
Case: TO252 (DPACK)
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols