LTV817S-B smd

Symbol Micros: OOPC817bltvs
Contractor Symbol:
Case : PDIP04smd
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Single-Channel CTR 130-260% Vce 35V Uiso 5kV FOD817BS, LTV-817S-TA1-B
Parameters
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 35V
Manufacturer:: LITE-ON Manufacturer part number: LTV-817S-TA1-B RoHS Case style: PDIP04smd Datasheet
In stock:
20 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 2000+
Net price (EUR) 0,2304 0,1114 0,0762 0,0675 0,0658
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Packaging:
1000/2000
Manufacturer:: LITE-ON Manufacturer part number: LTV-817S-TA1-B-G RoHS Case style: PDIP04smd Datasheet
In stock:
4049 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 2000+
Net price (EUR) 0,2304 0,1114 0,0762 0,0675 0,0658
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Packaging:
1000/2000
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817BSD Case style: PDIP04smd  
External warehouse:
130000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0961
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: ON-Semicoductor Manufacturer part number: FOD817BSD Case style: PDIP04smd  
External warehouse:
144000 pcs.
Quantity of pcs. 2000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,0886
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
         
 
Item in delivery
Estimated date:
2025-10-15
Quantity of pcs.: 2000
         
 
Item in delivery
Estimated date:
2025-11-30
Quantity of pcs.: 15000
CTR: 130-260%
Case: PDIP04smd
Output type: NPN Phototransistor
Insulation breakdown voltage: 5000V
Output voltage: 35V

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