LTV817S-B smd

Symbol Micros: OOPC817bltvs
Contractor Symbol:
Case : PDIP04smd
Single-Channel CTR 130-260% Vce 35V Uiso 5kV FOD817BS, LTV-817S-TA1-B
Parameters
Case: PDIP04smd
CTR: 130-260%
Insulation breakdown voltage: 5000V
Output type: NPN Phototransistor
Output voltage [V]: 35V
Manufacturer:: LITE-ON Manufacturer part number: LTV-817S-TA1-B RoHS Case style: PDIP04smd Datasheet
In stock:
4620 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 2000+
Net price (EUR) 0,2667 0,1292 0,0884 0,0782 0,0763
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Packaging:
1000/2000/14000
Manufacturer:: LITE-ON Manufacturer part number: LTV-817S-TA1-B-G RoHS Case style: PDIP04smd Datasheet
In stock:
2449 pcs.
Quantity of pcs. 5+ 30+ 200+ 1000+ 2000+
Net price (EUR) 0,2667 0,1292 0,0884 0,0782 0,0763
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Packaging:
1000/2000
Manufacturer:: ON-Semiconductor Manufacturer part number: FOD817BSD Case style: PDIP04smd  
External warehouse:
37000 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,0763
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
         
 
Item in delivery
Estimated date:
2026-09-30
Quantity of pcs.: 10000
Case: PDIP04smd
CTR: 130-260%
Insulation breakdown voltage: 5000V
Output type: NPN Phototransistor
Output voltage [V]: 35V