IS61WV25616BLL-10TLI
| Case: | TSOP2-44 |
| Supply voltage range: | 3.0~3.6V |
| RAM memory: | 256kB |
| Manufacturer: | ISSI |
| Architecture: | 16-bit |
| ADC: | NO |
| ETHERNET interface: | NO |
| Case: | TSOP2-44 |
| Supply voltage range: | 3.0~3.6V |
| RAM memory: | 256kB |
| Manufacturer: | ISSI |
| Architecture: | 16-bit |
| ADC: | NO |
| ETHERNET interface: | NO |
| Operating temperature (range): | -40°C ~ 85°C |
| SPI interface: | NO |
| TWI (I2C) interface: | NO |
| UART/USART interface: | NO |
| CAN interface: | NO |
| DAC: | NO |
| Encryption: | NO |
| USB interface: | NO |
IS61WV25616BLL-10TLI - SRAM memory manufactured using CMOS technology. Data is stored and retrieved asynchronously in the form of 16-bit words. The memory operating mode is selected using the following signals: Chip Enable (~CE, memory activation), Write Enable (~WE, write activation), Output Enable (~OE, read activation).
Selected Features:
- Capacity: 4Mbit;
- Organization: 16-bit;
- Access time: 10ns;
- TTL-compatible inputs/outputs;
- Three-state outputs – allowing multiple memory chips to be connected together;
- Power consumption:
Active mode: 45mA max;
Standby mode: 15mA max (TTL), 9mA max (CMOS);
- Supply voltage: 3.3V;
- Operating temperature: -40÷85°C;
This memory is used in applications requiring high data storage density and fast processing speed.