SI2304BDS

Symbol Micros: TSI2304bds VBS
Contractor Symbol:
Case : SOT23
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Transistor N-MOSFET; 30V; 20V; 105mOhm; 2,6A; 750mW; -55°C~150°C; SI2304-TP; SI2304BDS-T1-BE3; SI2304BDS-T1-GE3; SI2304BDS-T1-E3; Transistors - FETs, MOSFETs - Single; SI2304BDS-T1-GE3-VB;
Parameters
Open channel resistance: 105mOhm
Max. drain current: 2,6A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VBsemi
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: VBsemi Manufacturer part number: SI2304BDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
50 pcs.
Quantity of pcs. 3+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,3884 0,2542 0,1824 0,1596 0,1495
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Packaging:
50
Open channel resistance: 105mOhm
Max. drain current: 2,6A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VBsemi
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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