SI2304BDS

Symbol Micros: TSI2304bds
Contractor Symbol:
Case : SOT23
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Transistor N-Channel MOSFET; 30V; 20V; 105mOhm; 2,6A; 750mW; -55°C ~ 150°C; Equivalent: SI2304-TP; SI2304BDS-T1-BE3; SI2304BDS-T1-GE3; SI2304BDS-T1-E3;
Parameters
Open channel resistance: 105mOhm
Max. drain current: 2,6A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: Vishay Manufacturer part number: SI2304BDS-T1-GE3 RoHS Case style: SOT23t/r Datasheet
In stock:
150 pcs.
Quantity of pcs. 2+ 10+ 40+ 150+ 600+
Net price (EUR) 0,5177 0,3111 0,2446 0,2183 0,2066
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Packaging:
150
Manufacturer:: Vishay Manufacturer part number: SI2304BDS-T1-E3 Pbf L4Y0A Case style: SOT23t/r Datasheet
In stock:
10 pcs.
Quantity of pcs. 2+ 15+ 100+ 300+ 1000+
Net price (EUR) 0,5154 0,2874 0,2256 0,2126 0,2059
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Packaging:
100
Open channel resistance: 105mOhm
Max. drain current: 2,6A
Max. power loss: 750mW
Case: SOT23
Manufacturer: VISHAY
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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