SI2304BDS
Symbol Micros:
TSI2304bds
Case : SOT23
Transistor N-Channel MOSFET; 30V; 20V; 105mOhm; 2,6A; 750mW; -55°C ~ 150°C; Equivalent: SI2304-TP; SI2304BDS-T1-BE3; SI2304BDS-T1-GE3; SI2304BDS-T1-E3;
Parameters
| Open channel resistance: | 105mOhm |
| Max. drain current: | 2,6A |
| Max. power loss: | 750mW |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 105mOhm |
| Max. drain current: | 2,6A |
| Max. power loss: | 750mW |
| Case: | SOT23 |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 30V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
Equivalents
Manufacturer::
VBsemi
Manufacturer part number:
SI2304BDS-T1-GE3 RoHS
Case style:
SOT23t/r
In stock
50 pcs.
| Quantity of pcs. | 3+ | 10+ | 50+ | 200+ | 1000+ |
| Net price (EUR) | 0,3866 | 0,2530 | 0,1816 | 0,1588 | 0,1488 |
Packaging: 50
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