AP9997GK-HF-3 ADVENCED POWER

Symbol Micros: TAP9997gk-hf-3

95794

TAP9997gk-hf-3

Contractor Symbol:

Case : SOT223

Datasheet

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N-MOSFET 100V 3.2A 2W

Parameters

Open channel resistance:	200mOhm
Max. drain current:	3,2A
Max. power loss:	2,8W
Case:	SOT223
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP9997GK-HF-3 RoHS Case style: SOT223t/r Datasheet

In stock:

235 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,5444	0,3440	0,2688	0,2437	0,2369

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Packaging:
500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	3,2A
Max. power loss:	2,8W
Case:	SOT223
Manufacturer:	Advanced Power Electronics Corp.
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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