AP9997GK-HF-3 ADVENCED POWER

Symbol Micros: TAP9997gk-hf-3
Contractor Symbol:
Case : SOT223
N-MOSFET 100V 3.2A 2W
Parameters
Open channel resistance: 200mOhm
Max. drain current: 3,2A
Max. power loss: 2,8W
Case: SOT223
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Advanced Power Electronics Corp. Manufacturer part number: AP9997GK-HF-3 RoHS Case style: SOT223t/r Datasheet
In stock:
285 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,6581 0,4156 0,3256 0,2956 0,2863
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Packaging:
500
Open channel resistance: 200mOhm
Max. drain current: 3,2A
Max. power loss: 2,8W
Case: SOT223
Manufacturer: Advanced Power Electronics Corp.
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD