BC846ALT1G

Symbol Micros: TBC846al ONS

289511

TBC846al ONS

Contractor Symbol:

Case : SOT23-3

Datasheet

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Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 BC846ALT3G

Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	220
Case:	SOT23-3
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V

All parameters

Manufacturer:: ON-Semicoductor Manufacturer part number: BC846ALT1G RoHS Case style: SOT23-3 t/r Datasheet

In stock:

3750 pcs.

Quantity of pcs.	10+	50+	200+	1000+	3000+
Net price (EUR)	0,0893	0,0353	0,0206	0,0150	0,0138

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000 Quantity (multiple: 10)

- +

Manufacturer:: ON-Semicoductor Manufacturer part number: BC846ALT1G Case style: SOT23-3  

External warehouse:

93000 pcs.

Quantity of pcs.	15000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0138

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: BC846ALT1G Case style: SOT23-3  

External warehouse:

393000 pcs.

Quantity of pcs.	45000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0138

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: ON-Semicoductor Manufacturer part number: BC846ALT1G Case style: SOT23-3  

External warehouse:

114000 pcs.

Quantity of pcs.	15000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,0138

Add to comparison tool Add inquiry (RFQ)

Packaging:
3000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Power dissipation:	300mW
Manufacturer:	ON SEMICONDUCTOR
Current gain factor:	220
Case:	SOT23-3
Cutoff frequency:	100MHz
Max. collector current:	100mA
Max collector-emmiter voltage:	65V
Operating temperature (range):	-55°C ~ 150°C
Transistor type:	NPN

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